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BDX20 PNP SILICON TRANSISTORS EPITAXIAL BASE LF Large Signal Power Amplification High Current Fast Switching Thermal Fatigue Inspection ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VCEX VEBO Collector to Base Voltage #Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Base Current - Continuous Total Device Dissipation Junction Temperature Storage Temperature VBE=1.5 V Ratings Value -60 -140 -160 -7 -10 -7 117 200 -65 to +200 Unit V V V V A A Watts C C IC IB PTOT TJ TS THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case Value 1.5 Unit C/W COMSET SEMICONDUCTORS 1/2 BDX20 ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol VCEO(SUS) VCEX ICEX ICBO IEBO h21E VCE(SAT) VBE fT Ratings Test Condition(s) Min Typ Mx Unit 10 -1.7 -5.7 -1.0 -10 -1.0 -5.0 70 -1.0 -5.0 V V mA mA mA V V MHz Collector-Emitter Sustaining IC=-200 mA, IB=0 -140 Voltage (*) Collector-Emitter -160 IC=-100 mA, VBE=1.5 V Breakdown Voltage (*) VCE=-140 V, VBE=1.5 V Collector Cutoff Current VCE=-140 V, VBE=1.5 V, TCASE=150C Collector-Base Cutoff VCB=-140 V, IE=0 Current Emitter-Base Cutoff Current VBE=-7.0 V, IC=0 Static Forward Current Transfer Ratio (*) Collector-Emitter Saturation Voltage (*) Base-Emitter Voltage (*) Transition Frequency IC=-3.0 A, VCE=-4.0 V IC=10 A, VCE=-4.0 V IC=-3.0 A, IB=-0.3 A IC=-10 A, IB=-2 A IC=-3.0 Adc, VCE=-4.0 V IC=-10 A, VCE=-4.0 V VCE=-10 V, IC=-1.0 Adc, f=1.0 MHz 20 4 In accordance with JEDEC Registration Data (*) Pulse Width 300 s, Duty Cycle 2.0% MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector COMSET SEMICONDUCTORS 2/2 |
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